Dr. Arjun Shetty - B.Tech(MIT - Manipal), M.Tech(IIIt - Hyderabad), PhD(IISc Bangalore), Postdoctoral( Institute for Quantum Computing - Canada)

Arjun Shetty, a Yield Development Engineer at Intel Corporation in Hillsboro, Oregon, USA, brings a wide range of expertise in semiconductor devices and quantum electronics.

He earned his Ph.D. from the Indian Institute of Science, specializing in III-nitride semiconductors and developing Schottky diodes and photodetectors using molecular beam epitaxy.

His background includes two years as a Sr. Device Engineer at SanDisk India, where he focused on silicon NAND flash memory reliability.

Furthering his research experience, Arjun completed a four-year Postdoctoral Fellowship at the Institute for Quantum Computing, University of Waterloo, contributing to projects involving undoped AlGaAs/GaAs heterostructures for quantum applications, Si spin qubits, and III-As nanowire photodetectors.

Since joining Intel in 2022, he has been involved in yield development for the company's leading technology nodes.

His research interests lie in III-V semiconductors, quantum semiconductor devices, low-dimensional quantum transport, optoelectronics, and semiconductor device modeling.